Description
MOSFET P-CH 100V 23A TO247AC
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Category
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
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Rds On (Max) @ Id, Vgs
117mOhm @ 13A, 10V
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Mfr
Infineon Technologies
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Vgs(th) (Max) @ Id
4V @ 250µA
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Series
HEXFET®
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Gate Charge (Qg) (Max) @ Vgs
97 nC @ 10 V
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Packaging
Bag
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Vgs (Max)
±20V
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Part Status
Obsolete
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Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
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FET Type
P-Channel
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Power Dissipation (Max)
140W (Tc)
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Technology
MOSFET (Metal Oxide)
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Operating Temperature
-55°C ~ 175°C (TJ)
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Drain to Source Voltage (Vdss)
100 V
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Mounting Type
Through Hole
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Current – Continuous Drain (Id) @ 25°C
23A (Tc)
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Supplier Device Package
TO-247AC
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Drive Voltage (Max Rds On, Min Rds On)
10V
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Package / Case
TO-247-3
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