Description
MOSFET N-CH 200V 4.6A TO252AA
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Category
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
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Vgs(th) (Max) @ Id
4V @ 250µA
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Mfr
Harris Corporation
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Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
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Packaging
Bulk
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Vgs (Max)
±20V
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Part Status
Active
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Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
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FET Type
N-Channel
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Power Dissipation (Max)
50W (Tc)
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Technology
MOSFET (Metal Oxide)
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Operating Temperature
-55°C ~ 150°C (TJ)
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Drain to Source Voltage (Vdss)
200 V
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Mounting Type
Surface Mount
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Current – Continuous Drain (Id) @ 25°C
4.6A (Tc)
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Supplier Device Package
TO-252AA
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Rds On (Max) @ Id, Vgs
800mOhm @ 2.4A, 10V
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Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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