Description
MOSFET N-CH 150V 85A TO220AB
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Category
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
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Vgs(th) (Max) @ Id
5V @ 250µA
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Mfr
Infineon Technologies
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Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
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Series
HEXFET®
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Vgs (Max)
±30V
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Packaging
Tube
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Input Capacitance (Ciss) (Max) @ Vds
4460 pF @ 50 V
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Part Status
Active
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Power Dissipation (Max)
350W (Tc)
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FET Type
N-Channel
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Operating Temperature
-55°C ~ 175°C (TJ)
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Technology
MOSFET (Metal Oxide)
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Mounting Type
Through Hole
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Drain to Source Voltage (Vdss)
150 V
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Supplier Device Package
TO-220AB
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Current – Continuous Drain (Id) @ 25°C
85A (Tc)
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Package / Case
TO-220-3
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Drive Voltage (Max Rds On, Min Rds On)
10V
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Base Product Number
IRFB4321
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Rds On (Max) @ Id, Vgs
15mOhm @ 33A, 10V
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